High mobility and high thermoelectric power factor in epitaxial ScN thin films deposited with plasma-assisted molecular beam epitaxy
Authors: Rao, D; Biswas, B; Flores, E; Chatterjee, A; Garbrecht, M; Koh, YR; Bhatia, V; Pillai, AIK; Hopkins, PE; Martin-Gonzalez, M; Saha, B Article. Appl. Phys. Lett.. vol: 116. page: 0003-6951. Date: APR 13. 2020. Doi: 10.1063/5.0004761. Abstract: Scandium nitride (ScN) is an emerging rock salt III-nitride semiconductor and has attracted significant interest in recent years